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http://hdl.handle.net/11452/33266
Başlık: | The electrical properties of Au/MEH-PPV:PCBM/n-type GaAs Schottky barrier diode |
Yazarlar: | Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü. Ahmetoglu (Afrailov), Muhitdin Kırsoy, Ahmet Asimov, A. Kucur, Banu CBY-1915-2022 CCC-9142-2022 FDX-3050-2022 CZA-5782-2022 55849025200 56716481600 55849632800 36903670200 |
Anahtar kelimeler: | Materials science Optics Schottky barrier diode Series resistance Ideality factor Conducting polymers State density distributions Electronic parameters V characteristics Current-voltage C-V Interface states I-V Mechanism PPV Capacitance Electric resistance Gallium arsenide Gold compounds III-V semiconductors Interface states Semiconducting gallium Semiconductor diodes Capacitance-voltage characteristics Energy distributions Ideality factors Interfacial layer IV characteristics Schottky barrier diodes (SBDs) Semiconductor layers Series resistances Schottky barrier diodes |
Yayın Tarihi: | 25-Kas-2016 |
Yayıncı: | National Institute of Optoelectronics |
Atıf: | Ahmetoğlu (Afrailov), M. vd. (2016). "The electrical properties of Au/MEH-PPV:PCBM/n-type GaAs Schottky barrier diode". Optoelectronics and Advanced Materials, Rapid Communications, 10(11-12), 825-830. |
Özet: | We fabricated the Au/Meh-PPV:PCBM/n-type GaAs Schottky barrier diodes (SBDs). Then we investigated Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the diode at room temperature. MEH-PPV:PCBM (in a mass ratio 1:4) used as interfacial layer between metal and semiconductor layers. Here, MEH-PPV is poly [2-methoxy-5-(ethylhexyloxy)1,4-phenylenevinylene] and PCBM is [6,6]-phenyl-61C-butric acid methyl ester). SBD parameters such as ideality factor, barrier height and series resistance were obtained from I-V and C-V measurements. Also, Cheung functions and Norde Method were used to evaluate the I-V characteristics and to determine the characteristic parameters of the Schottky diode. The diode parameters such as ideality factor, barrier heights and series resistance were found as 4.39-4.54 and 0.57-0.63 eV and 51-53 Omega respectively. Also the interface states energy distribution of the diode was determined and found as 1.09 x 10(12) ev(-1)cm(-2)at (Ec-0.352) eV to 2.94 x 10(11) eV(-1)crn(-2) at (Ec-0.436) eV. |
URI: | http://hdl.handle.net/11452/33266 |
ISSN: | 1842-6573 2065-3824 |
Koleksiyonlarda Görünür: | Scopus Web of Science |
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