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Başlık: The characteristics of ZnS/Si heterojunction diode fabricated by thermionic vacuum arc
Yazarlar: Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.
0000-0002-4144-5837
Kaplan, Hüseyin Kaan
Sarsıcı, Serhat
Akay, Sertan Kemal
Ahmetoğlu, Muhittin
R-7260-2016
GWV-7916-2022
57194768599
57194775738
24801954600
16021109400
Anahtar kelimeler: Chemistry
Materials science
Metallurgy & metallurgical engineering
Heterojunction
Thermionic vacuum arc
Thin film
ZnS
Optical-properties
Solar-cells
Deposition
Atomic force microscopy
Capacitance
Carrier concentration
Crystal atomic structure
Deposition
Diodes
Electric resistance
Fabrication
Heterojunctions
Semiconductor diodes
Silicon
Vacuum applications
Vacuum technology
X ray diffraction
Zinc
Zinc sulfide
Capacitance voltage measurements
Current transport mechanism
Dark current-voltage
Electrical parameter
Hall effect measurement
Heterojunction diodes
Rectifying characteristics
Thermionic vacuum arc
Thin films
Yayın Tarihi: 6-Tem-2017
Yayıncı: Elsevier
Atıf: Kaplan, H. K. vd. (2017). ''The characteristics of ZnS/Si heterojunction diode fabricated by thermionic vacuum arc''. Journal of Alloys and Compounds, 724, 543-548.
Özet: ZnS/p-Si heterojunction diode has been successfully fabricated by depositing the ZnS thin films on p-type Si substrates using thermionic vacuum arc technique (TVA). The structural analysis was performed with X-ray diffraction (XRD) and Atomic force microscopy (AFM). The results revealed that ZnS thin film demonstrates nano-crystalline behavior with very smooth and homogeneous surface properties. The type was determined as n-type and the carrier concentration was found approximately 3.1 +/- 10(17) cm(-3) of the ZnS thin film by means of Hall Effect measurement. The dark current-voltage (I-V) and the capacitance- voltage (C-V) measurements with different frequencies were performed to determine the characteristics of the ZnS/p-Si heterojunction diode at room temperature. I-V results show that the diode has a good rectifying characteristic with excellent rectification ratio. The electrical parameters of the diode have been obtained by using current transport mechanism. It was found that the barrier height calculated from dark I-V measurements is in good agreement with the value obtained from C-V measurements at a frequency of 1.5 MHz. The series resistance and the built in potential of the fabricated diode were calculated as 3.6 k Omega and 0.7 V using Cheung and Cheung's equation and C-V measurement, respectively. The low cost and effective film production method were utilized to fabrication of heterojunction diode and to investigate characteristics.
URI: https://doi.org/10.1016/j.jallcom.2017.07.053
https://www.sciencedirect.com/science/article/pii/S0925838817324179
1873-4669
http://hdl.handle.net/11452/30222
ISSN: 0925-8388
Koleksiyonlarda Görünür:Scopus
Web of Science

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