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http://hdl.handle.net/11452/25805| Title: | Photoelectrical characteristics of GaSb/GaInAsSb/GaAlAsSb heterojunction photodiodes under illumination by photons with wavelength of 0.95-1.0 mu m |
| Authors: | Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü. Afrailov, Muhitdin Ahmetoğlu 55153359100 |
| Keywords: | Materials science Physics Dark currents Type II heterojunctions Band alignment Liquid phase epitaxy Photovoltaic characteristics III-V semiconductors Spectral range Heterojunctions Light Liquid phase epitaxy Open circuit voltage Photovoltaic effects Band alignments Heterojunction photodiodes Incident light Photovoltaic modes Room temperature Type II Type II heterojunction Current voltage characteristics |
| Issue Date: | 31-May-2012 |
| Publisher: | Elsevier Science |
| Citation: | Afrailov, M. A. (2012). "Photoelectrical characteristics of GaSb/GaInAsSb/GaAlAsSb heterojunction photodiodes under illumination by photons with wavelength of 0.95-1.0 mu m". Thin Solid Films, 520(15), 5014-5017. |
| Abstract: | The photovoltaic characteristics of a type II staggered heterojunction in the GaSb/GaInAsSb/GaAlAsSb system were studied. The dark current and R(0)A product were investigated at different temperatures. The current-voltage characteristics of n-GaSb/n-GaInAsSb/p-GaAlAsSb heterostructures were investigated at room temperature in the photovoltaic mode under illumination by light with wavelength of 0.95-1.0 mu m and different intensities. A short-circuit current and an open circuit voltage as a function of intensity of incident light in photovoltaic mode were studied. |
| URI: | https://doi.org/10.1016/j.tsf.2012.03.014 https://www.sciencedirect.com/science/article/pii/S0040609012002738 http://hdl.handle.net/11452/25805 |
| ISSN: | 0040-6090 |
| Appears in Collections: | Scopus Web of Science |
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