1. Açık Erişim@BUU
  2. İndeksli Yayınlar
  3. Web of Science
Please use this identifier to cite or link to this item: http://hdl.handle.net/11452/25805
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dc.date.accessioned2022-04-15T11:35:01Z-
dc.date.available2022-04-15T11:35:01Z-
dc.date.issued2012-05-31-
dc.identifier.citationAfrailov, M. A. (2012). "Photoelectrical characteristics of GaSb/GaInAsSb/GaAlAsSb heterojunction photodiodes under illumination by photons with wavelength of 0.95-1.0 mu m". Thin Solid Films, 520(15), 5014-5017.en_US
dc.identifier.issn0040-6090-
dc.identifier.urihttps://doi.org/10.1016/j.tsf.2012.03.014-
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S0040609012002738-
dc.identifier.urihttp://hdl.handle.net/11452/25805-
dc.description.abstractThe photovoltaic characteristics of a type II staggered heterojunction in the GaSb/GaInAsSb/GaAlAsSb system were studied. The dark current and R(0)A product were investigated at different temperatures. The current-voltage characteristics of n-GaSb/n-GaInAsSb/p-GaAlAsSb heterostructures were investigated at room temperature in the photovoltaic mode under illumination by light with wavelength of 0.95-1.0 mu m and different intensities. A short-circuit current and an open circuit voltage as a function of intensity of incident light in photovoltaic mode were studied.en_US
dc.language.isoenen_US
dc.publisherElsevier Scienceen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMaterials scienceen_US
dc.subjectPhysicsen_US
dc.subjectDark currentsen_US
dc.subjectType II heterojunctionsen_US
dc.subjectBand alignmenten_US
dc.subjectLiquid phase epitaxyen_US
dc.subjectPhotovoltaic characteristicsen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectSpectral rangeen_US
dc.subjectHeterojunctionsen_US
dc.subjectLighten_US
dc.subjectLiquid phase epitaxyen_US
dc.subjectOpen circuit voltageen_US
dc.subjectPhotovoltaic effectsen_US
dc.subjectBand alignmentsen_US
dc.subjectHeterojunction photodiodesen_US
dc.subjectIncident lighten_US
dc.subjectPhotovoltaic modesen_US
dc.subjectRoom temperatureen_US
dc.subjectType IIen_US
dc.subjectType II heterojunctionen_US
dc.subjectCurrent voltage characteristicsen_US
dc.titlePhotoelectrical characteristics of GaSb/GaInAsSb/GaAlAsSb heterojunction photodiodes under illumination by photons with wavelength of 0.95-1.0 mu men_US
dc.typeArticleen_US
dc.identifier.wos000304568300034tr_TR
dc.identifier.scopus2-s2.0-84860264687tr_TR
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergitr_TR
dc.contributor.departmentUludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.tr_TR
dc.relation.bap2007/36tr_TR
dc.identifier.startpage5014tr_TR
dc.identifier.endpage5017tr_TR
dc.identifier.volume520tr_TR
dc.identifier.issue14tr_TR
dc.relation.journalThin Solid Filmsen_US
dc.contributor.buuauthorAfrailov, Muhitdin Ahmetoğlu-
dc.subject.wosMaterials science, multidisciplinaryen_US
dc.subject.wosMaterials science, coatings & filmsen_US
dc.subject.wosPhysics, applieden_US
dc.subject.wosPhysics, condensed matteren_US
dc.indexed.wosSCIEen_US
dc.indexed.scopusScopusen_US
dc.wos.quartileQ2en_US
dc.contributor.scopusid55153359100en_US
dc.subject.scopusSemiconductor Quantum Wells; Heterostructures; Photodiodesen_US
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