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Başlık: Current transport in GaSb /GaInAsSb/GaAlAsSb heterojunction photodiodes
Yazarlar: Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.
Ahmetoğlu, Muhitdin A.
16021109400
Anahtar kelimeler: Broken-gap heterojunctions
Current flow mechanisms
Type ii staggered-lineup
II heterojunctions
Radiation
Lasers
Materials science
Optics
Aluminum compounds
Current voltage characteristics
Heterojunctions
III-V semiconductors
Indium compounds
Semiconducting antimony compounds
Broken gaps
Current flow mechanisms
Current transport
Diffusion mechanisms
Experimental investigations
Heterojunction photodiodes
Tunneling charges
Type II
Gallium compounds
Yayın Tarihi: Haz-2009
Yayıncı: Natl Inst Optoelectronics
Atıf: Ahmetoğlu, M. A. vd. (2009). "Current transport in GaSb /GaInAsSb/GaAlAsSb heterojunction photodiodes". Optoelectronics and Advanced Materials, Rapid Communications, 3(6), 604-607.
Özet: Current flow mechanisms have been studied for Liquid Phase Epitaxy (LPE) grown n-GaSb /n-GaInAsSb /p -GaAlAsSb heterostructures lattice-matched to GaSb substrates. An experimental investigation of current-voltage characteristics has been done in the temperature range from 80-300K, and have been determined the mechanism of the flow of dark current. The qualitative comparison of experimental results with theory shows that, in the high temperature region the diffusion mechanism of the current flow dominates in both, forward and reverse biases. The tunneling charge has the key role at low temperatures under both forward and reverse biases.
URI: http://hdl.handle.net/11452/25257
ISSN: 1842-6573
Koleksiyonlarda Görünür:Scopus
Web of Science

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