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http://hdl.handle.net/11452/25257
Başlık: | Current transport in GaSb /GaInAsSb/GaAlAsSb heterojunction photodiodes |
Yazarlar: | Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü. Ahmetoğlu, Muhitdin A. 16021109400 |
Anahtar kelimeler: | Broken-gap heterojunctions Current flow mechanisms Type ii staggered-lineup II heterojunctions Radiation Lasers Materials science Optics Aluminum compounds Current voltage characteristics Heterojunctions III-V semiconductors Indium compounds Semiconducting antimony compounds Broken gaps Current flow mechanisms Current transport Diffusion mechanisms Experimental investigations Heterojunction photodiodes Tunneling charges Type II Gallium compounds |
Yayın Tarihi: | Haz-2009 |
Yayıncı: | Natl Inst Optoelectronics |
Atıf: | Ahmetoğlu, M. A. vd. (2009). "Current transport in GaSb /GaInAsSb/GaAlAsSb heterojunction photodiodes". Optoelectronics and Advanced Materials, Rapid Communications, 3(6), 604-607. |
Özet: | Current flow mechanisms have been studied for Liquid Phase Epitaxy (LPE) grown n-GaSb /n-GaInAsSb /p -GaAlAsSb heterostructures lattice-matched to GaSb substrates. An experimental investigation of current-voltage characteristics has been done in the temperature range from 80-300K, and have been determined the mechanism of the flow of dark current. The qualitative comparison of experimental results with theory shows that, in the high temperature region the diffusion mechanism of the current flow dominates in both, forward and reverse biases. The tunneling charge has the key role at low temperatures under both forward and reverse biases. |
URI: | http://hdl.handle.net/11452/25257 |
ISSN: | 1842-6573 |
Koleksiyonlarda Görünür: | Scopus Web of Science |
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