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http://hdl.handle.net/11452/24759
Başlık: | Electrical and optical properties of the GaInAsSb-based heterojunctions for infrared photodiode and thermophotovoltaic cell application |
Yazarlar: | Andreev, Igor A. Kunitsyna, Ekaterina V. Mikhaǐlova, Maya P. Yakovlev, Yu P. Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü. Ahmetoğlu, Muhitdin A. Kucur, Banu 16021109400 36903670200 |
Anahtar kelimeler: | III-V semiconductors Dark currents Spectral sensitivity Photodiodes TPV cells Instruments & instrumentation Optics Physics Antireflection coatings Dark currents Electric properties Heterojunctions Optical materials Optical properties Photodiodes Spectroscopy At-wavelength Band alignments Current flows Current mechanisms Depletion region Double heterojunctions Electrical and optical properties GaInAsSb Heterostructures High temperature II-IV semiconductors Infrared photodiode Internal quantum efficiency Long wavelength Low temperature regions Optical characteristics Reverse bias Reverse currents Spectral sensitivity Temperature coefficient Thermophoto voltaic cells Tunneling mechanism Type II Quantum efficiency |
Yayın Tarihi: | Eyl-2010 |
Yayıncı: | Elsevier |
Atıf: | Ahmetoğlu, M. A. vd. (2010). "Electrical and optical properties of the GaInAsSb-based heterojunctions for infrared photodiode and thermophotovoltaic cell application". Infrared Physics and Technology, 53(5), 399-403. |
Özet: | The electrical end optical characteristics of a type II double heterojunction (DH) in the GaSb/GaInAsSb/GaAlAsSb system with staggered band alignment were studied. An analysis of the photodiodes performance through the investigation into electrical and optical characteristics was carried out. The dark current mechanisms in the heterostructures were investigated at several temperatures. The experimental results show that at the low temperature region, the tunneling mechanism of the current flow dominates in both forward and reverse biases. At high temperatures region and in the range of voltage from 0.1 V to 1 V, the reverse current was defined by generation of carriers in the depletion region. Have been estimated the temperature coefficient of the shift of the long-wavelength edge of the spectral sensitivity at half-maximum as Delta lambda/Delta T = 1.6 nm/K. Quantum efficiency of 0.6-0.7 for the investigated photodiodes was reached without any antireflection coating. For GaSb/GaInAsSb/GaAlAsSb TPV cells, the internal quantum efficiency of 90% was achieved at wavelengths between 1.2 and 1.6 mu m. (C) 2010 Elsevier B.V. All rights reserved. |
URI: | https://doi.org/10.1016/j.infrared.2010.07.007 https://www.sciencedirect.com/science/article/pii/S1350449510000575 http://hdl.handle.net/11452/24759 |
ISSN: | 1350-4495 1879-0275 |
Koleksiyonlarda Görünür: | Scopus Web of Science |
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