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Başlık: Electrical and optical properties of the GaInAsSb-based heterojunctions for infrared photodiode and thermophotovoltaic cell application
Yazarlar: Andreev, Igor A.
Kunitsyna, Ekaterina V.
Mikhaǐlova, Maya P.
Yakovlev, Yu P.
Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.
Ahmetoğlu, Muhitdin A.
Kucur, Banu
16021109400
36903670200
Anahtar kelimeler: III-V semiconductors
Dark currents
Spectral sensitivity
Photodiodes
TPV cells
Instruments & instrumentation
Optics
Physics
Antireflection coatings
Dark currents
Electric properties
Heterojunctions
Optical materials
Optical properties
Photodiodes
Spectroscopy
At-wavelength
Band alignments
Current flows
Current mechanisms
Depletion region
Double heterojunctions
Electrical and optical properties
GaInAsSb
Heterostructures
High temperature
II-IV semiconductors
Infrared photodiode
Internal quantum efficiency
Long wavelength
Low temperature regions
Optical characteristics
Reverse bias
Reverse currents
Spectral sensitivity
Temperature coefficient
Thermophoto voltaic cells
Tunneling mechanism
Type II
Quantum efficiency
Yayın Tarihi: Eyl-2010
Yayıncı: Elsevier
Atıf: Ahmetoğlu, M. A. vd. (2010). "Electrical and optical properties of the GaInAsSb-based heterojunctions for infrared photodiode and thermophotovoltaic cell application". Infrared Physics and Technology, 53(5), 399-403.
Özet: The electrical end optical characteristics of a type II double heterojunction (DH) in the GaSb/GaInAsSb/GaAlAsSb system with staggered band alignment were studied. An analysis of the photodiodes performance through the investigation into electrical and optical characteristics was carried out. The dark current mechanisms in the heterostructures were investigated at several temperatures. The experimental results show that at the low temperature region, the tunneling mechanism of the current flow dominates in both forward and reverse biases. At high temperatures region and in the range of voltage from 0.1 V to 1 V, the reverse current was defined by generation of carriers in the depletion region. Have been estimated the temperature coefficient of the shift of the long-wavelength edge of the spectral sensitivity at half-maximum as Delta lambda/Delta T = 1.6 nm/K. Quantum efficiency of 0.6-0.7 for the investigated photodiodes was reached without any antireflection coating. For GaSb/GaInAsSb/GaAlAsSb TPV cells, the internal quantum efficiency of 90% was achieved at wavelengths between 1.2 and 1.6 mu m. (C) 2010 Elsevier B.V. All rights reserved.
URI: https://doi.org/10.1016/j.infrared.2010.07.007
https://www.sciencedirect.com/science/article/pii/S1350449510000575
http://hdl.handle.net/11452/24759
ISSN: 1350-4495
1879-0275
Koleksiyonlarda Görünür:Scopus
Web of Science

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