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Dublin Core AlanıDeğerDil
dc.contributor.authorOkutan, Mustafa-
dc.contributor.authorYakuphanoğlu, Fahrettin-
dc.date.accessioned2022-12-16T06:39:55Z-
dc.date.available2022-12-16T06:39:55Z-
dc.date.issued2016-02-
dc.identifier.citationKırsoy, A. vd. (2016). "Electrical properties inorganic-on-organic hybrid gaas/graphene oxide schottky barrier diode". Journal of Nanoelectronics and Optoelectronics, 11(1), 108-114.en_US
dc.identifier.issn1555-130X-
dc.identifier.issn1555-1318-
dc.identifier.urihttps://doi.org/10.1166/jno.2016.1884-
dc.identifier.urihttps://www.ingentaconnect.com/content/asp/jno/2016/00000011/00000001/art00019;jsessionid=1ripkv5e87j54.x-ic-live-02-
dc.identifier.urihttp://hdl.handle.net/11452/29924-
dc.description.abstractThe Au88Ge12 alloy/n-type GaAs(100)/Graphene Oxide (GO)/Au Schottky barrier diode has been fabricated. GO has been prepared by Hummers method and deposited on the GaAs substrate by spraying method. Schottky diode was investigated under dark and light intensity by the current-voltage (I-V) characteristics of the heterojunction. Thermionic current mechanism above the barrier has been detected by current-voltage measurements. It was found that the barrier height increases and the ideality factor decreases with light intensity. The obtained results indicate that GaAs/GO diode can be used as a photosensor in optoelectronic applications. Also, Schottky diode has been measured by capacitance-voltage (C-V) and conductance-voltage (G-V) in the frequency range from 10 kHz to 1 MHz at room temperature.en_US
dc.language.isoenen_US
dc.publisherAmer Scientific Publishersen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectEngineeringen_US
dc.subjectScience & technology - other topicsen_US
dc.subjectPhysicsen_US
dc.subjectGraphene oxideen_US
dc.subjectGaAsen_US
dc.subjectSchottky contactsen_US
dc.subjectCurrent-voltageen_US
dc.subjectNegative capacitanceen_US
dc.subjectSeries resistanceen_US
dc.subjectElectronic parametersen_US
dc.subjectVoltage-dependenceen_US
dc.subjectV characteristicsen_US
dc.subjectInterface statesen_US
dc.subjectC-Ven_US
dc.subjectFrequencyen_US
dc.subjectTemperatureen_US
dc.subjectInterlayeren_US
dc.subjectCapacitanceen_US
dc.subjectDiodesen_US
dc.subjectGallium arsenideen_US
dc.subjectGermaniumen_US
dc.subjectGrapheneen_US
dc.subjectHeterojunctionsen_US
dc.subjectSemiconducting galliumen_US
dc.subjectCapacitance voltageen_US
dc.subjectCurrent voltageen_US
dc.subjectCurrent voltage measurementen_US
dc.subjectGraphene oxidesen_US
dc.subjectOptoelectronic applicationsen_US
dc.subjectThermionic currentsen_US
dc.subjectSchottky barrier diodesen_US
dc.titleElectrical properties inorganic-on-organic hybrid gaas/graphene oxide schottky barrier diodeen_US
dc.typeArticleen_US
dc.identifier.wos000377629000019tr_TR
dc.identifier.scopus2-s2.0-84954243495tr_TR
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergitr_TR
dc.contributor.departmentUludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.tr_TR
dc.identifier.startpage108tr_TR
dc.identifier.endpage114tr_TR
dc.identifier.volume11tr_TR
dc.identifier.issue1tr_TR
dc.relation.journalJournal of Nanoelectronics and Optoelectronicsen_US
dc.contributor.buuauthorKırsoy, Ahmet-
dc.contributor.buuauthorAhmetoğlu, Muhitdin A.-
dc.relation.collaborationYurt içitr_TR
dc.relation.collaborationSanayitr_TR
dc.subject.wosEngineering, electrical & electronicen_US
dc.subject.wosNanoscience & nanotechnologyen_US
dc.subject.wosPhysics, applieden_US
dc.indexed.wosSCIEen_US
dc.indexed.scopusScopusen_US
dc.wos.quartileQ4en_US
dc.contributor.scopusid56716481600tr_TR
dc.contributor.scopusid16021109400tr_TR
dc.subject.scopusSchottky Diodes; Thermionic Emission; Electrical Propertiesen_US
Koleksiyonlarda Görünür:Scopus
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